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铜单晶纳米线中部分位错介导塑性的交叉定量证据。

Quantitative evidence of crossover toward partial dislocation mediated plasticity in copper single crystalline nanowires.

机构信息

Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing, China.

出版信息

Nano Lett. 2012 Aug 8;12(8):4045-9. doi: 10.1021/nl3014132. Epub 2012 Jun 27.

Abstract

In situ tensile tests of Cu single crystalline nanowires in a high-resolution transmission electron microscope reveal a novel effect of sample dimensions on plasticity mechanisms. When the single crystalline nanowire size was reduced to <∼150 nm, the normal full dislocation slip was taken over by partial dislocation mediated plasticity (PDMP). For the first time, we demonstrate this transition in a quantitative manner by assessing the relative contributions to plastic strain from PDMP and full dislocations. The crossover sample size is consistent, well within model predictions. This discovery represents yet another "sample size effect", beyond other reported influence of sample dimensions on the mechanical behavior of metals, such as dislocation starvation or source truncation, and the "smaller is stronger" trend.

摘要

在高分辨率电子显微镜下对 Cu 单晶体纳米线进行原位拉伸测试,揭示了样品尺寸对塑性机制的影响。当单晶纳米线尺寸减小到<∼150nm 时,正常的全位错滑移被部分位错介导的塑性(PDMP)所取代。我们首次通过评估 PDMP 和全位错对塑性应变的相对贡献,以定量的方式证明了这种转变。交越样品尺寸是一致的,完全符合模型预测。这一发现代表了另一种“样品尺寸效应”,除了其他报道的样品尺寸对金属力学行为的影响,如位错饥饿或源截断,以及“越小越强”的趋势。

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