Department of Analytical Chemistry, Ghent University, Belgium.
Molecules. 2012 Jun 26;17(7):7824-42. doi: 10.3390/molecules17077824.
Self-assembled molecular films of two cobalt porphyrins with amine groups at different positions-(5,10,15,20-tetrakis-(2-aminophenyl) porphyrin-cobalt(II), [Co(II) (T(o-NH(2))PP)] and (5,10,15,20-tetrakis-(4-aminophenyl) porphyrin-cobalt(II), [Co(II)(T(p-NH(2))PP)]-were formed on a gold substrate. The functionalized surfaces were characterized using Raman spectroscopy, atomic force microscopy and electrochemical methods. Both modified gold surfaces completely mask the charge transfer of a Fe(CN)(6) redox couple in solution, indicating the layer is highly resistive in behavior. Electrochemical impedance spectroscopy analyses revealed that the porphyrin film with amine groups at ortho positions shows a higher charge-transfer resistance with a better protective behavior compared to the para position modified surface. Raman, AFM and EIS data suggests that an ortho amine positioned molecule forms a more compact layer compared to the para-positioned molecule. This can be explained in terms of their orientation on the gold surface. [Co(II)(T(o-NH(2))PP)] adopted a saddle shape orientation whereas [Co(II)(T(p-NH(2))PP)] adopted a flat orientation on the gold surface. The porphyrin modified gold electrode catalyzes the oxygen reduction at lower potentials compared to the bare gold electrode. The shift in the overvoltage was higher in case of molecules with flat orientation compared to the saddle shaped oriented porphyrin molecules on the surface.
两个具有不同位置胺基的钴卟啉的自组装分子膜-(5,10,15,20-四(2-氨苯基)卟啉-钴(II), [Co(II)(T(o-NH(2))PP)]和(5,10,15,20-四(4-氨苯基)卟啉-钴(II), [Co(II)(T(p-NH(2))PP)]-在金基底上形成。用拉曼光谱、原子力显微镜和电化学方法对功能化表面进行了表征。两种修饰的金表面都完全阻止了Fe(CN)(6)氧化还原偶在溶液中的电荷转移,表明该层的电阻非常大。电化学阻抗谱分析表明,与对位修饰表面相比,具有邻位胺基的卟啉膜具有更高的电荷转移电阻和更好的保护性能。拉曼、原子力显微镜和 EIS 数据表明,与对位分子相比,邻位胺基定位分子形成了更致密的层。这可以用它们在金表面上的取向来解释。[Co(II)(T(o-NH(2))PP)]采取了马鞍形取向,而[Co(II)(T(p-NH(2))PP)]则在金表面上采取了平面取向。与裸金电极相比,修饰卟啉的金电极在较低的电位下催化氧气还原。与表面上的马鞍形定向卟啉分子相比,具有平面定向的分子的过电势的偏移更高。