Department of Electrical Engineering, National Tsing Hua University, Hsinchu City, Taiwan.
Opt Lett. 2012 Jul 1;37(13):2760-2. doi: 10.1364/OL.37.002760.
This work presents a novel method to form polycrystalline Cu(In(1-x)Ga(x))Se(2) (CIGS) thin film by co-sputtering of In─Se and Cu─Ga alloy targets without an additional selenization process. An attempt was also made to thoroughly elucidate the surface morphology, crystalline phases, physical properties, and chemical properties of the CIGS films by using material analysis methods. Experimental results indicate that CIGS thin films featured densely packed grains and chalcopyrite phase peaks of (112), (220), (204), (312), and (116). Raman spectroscopy analysis revealed chalcopyrite CIGS phase with Raman shift at 175 cm(-1), while no signal at 258 cm(-1) indicated the exclusion of Cu(2-x)Se phase. Hall effect measurements confirmed the polycrystalline Cu(In,Ga)Se thin film to be of p type semiconductor with a film resistivity and mobility of 2.19×10(2) Ω cm and 88 cm(2)/V s, respectively.
本工作提出了一种新的方法，通过共溅射 In─Se 和 Cu─Ga 合金靶材，无需额外的硒化过程，即可形成多晶 Cu(In(1-x)Ga(x))Se(2) (CIGS) 薄膜。还尝试使用材料分析方法彻底阐明 CIGS 薄膜的表面形貌、晶体相、物理性质和化学性质。实验结果表明，CIGS 薄膜具有密排晶粒和黄铜矿相的(112)、(220)、(204)、(312)和(116)峰。拉曼光谱分析表明，CIGS 相的拉曼位移在 175 cm(-1)处，而在 258 cm(-1)处没有信号表明不存在 Cu(2-x)Se 相。霍尔效应测量证实多晶 Cu(In,Ga)Se 薄膜为 p 型半导体，薄膜电阻率和迁移率分别为 2.19×10(2) Ω cm 和 88 cm(2)/V s。
