Xu Dong-mei, Pan Kun, Liu Xu-wei, Wng Xue-jin, Wang Wen-zhong, Liang Chun-jun, Wang Zhi
Guang Pu Xue Yu Guang Pu Fen Xi. 2016 Oct;36(10):3197-201.
Cu(InxGa1-x)Se2(CIGS) precursor films were prepared on ITO glass with potentiostatic electrodeposition. High quality CIGS films were obtained by selenization of the precursor films at high temperature in tubular furnace full of argon gas. X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-Vis-NIR spectroscopy were used to characterize the structure, morphology, composition and Vis-NIR absorption of CIGS films, respectively. XRD results show the selenized CIGS films have a preferential orientation (112) with average crystallite of 24.7 nm. Raman spectroscopy reveals that the CIGS films are pure quaternaryphases with chalcopyrite structure, and without binary or ternary phases in the films. Vis-NIR measurements determine that the bandgap of CIGS increases with the increase of Ga concentration in the film. When the Ga concentration is 5.41%, its bandgap is about 1.11 eV, and the calculated ratio of Ga to (Ga+In) is 16.3%, which is less than the ratio of Ga to (Ga+In), 21.4%, measured by SEM. This indicates that crystallinity of CIGS filmsneeds to be further improved. All the measurements demonstratethat optimum ITO/CIGS has a promising application in bifacial solar cells. In this paper, we provide a newmethodtoelectrodeposit low cost CIGS precursor films and a new method forselenization ofthe precursor films at high temperature. As a result, theuniform and compact CIGS films with good adhesion on ITO are successfully fabricated by these methods. The above characterization show that we have obtained CIGS films with high crystallinity, near stoichiometry, few impurity phases and superior light absorption. Electrodeposition, like magnetron sputtering, is very suitable for large-scale industrial production. The research work in this paper is therefore important and considerable to massive production of electrodeposition of CIGS films.
采用恒电位电沉积法在氧化铟锡（ITO）玻璃上制备了铜铟镓硒（Cu(InxGa1-x)Se2，CIGS）前驱体薄膜。通过在充满氩气的管式炉中对前驱体薄膜进行高温硒化处理，获得了高质量的CIGS薄膜。分别使用X射线衍射（XRD）、扫描电子显微镜（SEM）和紫外-可见-近红外光谱（UV-Vis-NIR）对CIGS薄膜的结构、形貌、成分和可见-近红外吸收进行了表征。XRD结果表明，硒化后的CIGS薄膜具有（112）择优取向，平均晶粒尺寸为24.7 nm。拉曼光谱显示，CIGS薄膜为具有黄铜矿结构的纯四元相，薄膜中不存在二元或三元相。可见-近红外测量结果表明，CIGS的带隙随薄膜中镓浓度的增加而增大。当镓浓度为5.41%时，其带隙约为1.11 eV，计算得到的Ga与（Ga+In）的比值为16.3%，低于通过SEM测量得到的Ga与（Ga+In）的比值21.4%。这表明CIGS薄膜的结晶度需要进一步提高。所有测量结果表明，优化后的ITO/CIGS在双面太阳能电池中具有广阔的应用前景。在本文中，我们提供了一种电沉积低成本CIGS前驱体薄膜的新方法以及一种对前驱体薄膜进行高温硒化的新方法。结果，通过这些方法成功制备了在ITO上具有良好附着力的均匀致密的CIGS薄膜。上述表征表明，我们获得了具有高结晶度、接近化学计量比、杂质相少且光吸收优异的CIGS薄膜。电沉积与磁控溅射一样，非常适合大规模工业生产。因此，本文的研究工作对于大规模电沉积CIGS薄膜的生产具有重要意义。
