Chen Rong-Bin, Chiu Yu-Huang
Center of General Education, National Kaohsiung Marine University, Kaohsiung 811, Taiwan.
J Nanosci Nanotechnol. 2012 Mar;12(3):2557-66. doi: 10.1166/jnn.2012.5692.
Magneto-electronic properties of AA-stacked graphene superlattice (simple hexagonal graphite) are studied by the tight-binding model with an exact diagonalization method. The Landau subbands (LSs) with strong energy dispersions exist along k(z) and each subband possesses two band-edge states. Density of states reflects main features of the LSs, such as asymmetric prominent peak structures and the semimetallic behavior. Under the AA-stacked configuration, the LS wave functions are characterized by two sublattices, a and b. The quantum number (n(c,v)) of each LS, which corresponds to the number of zero points in the dominating carrier distributions, is determined by a certain sublattice and independent of k(z). For each LS, the difference between the number of zero point of the a and b sublattices is fixed and equals one. Furthermore, a reliable approximate solution of the low-lying LS energy is obtained. Through observing this solution, the dependence of the LS energy on the field strength and quantum number, k(z)-dependent energy spacing between two LSs, and the values of atomic hopping integrals are reasonably determined. A comparison of the AA-stacked graphene superlattice and monolayer graphene demonstrates that they possess some similar magneto-electronic properties.
采用紧束缚模型和精确对角化方法研究了AA堆积石墨烯超晶格(简单六方石墨)的磁电性质。具有强能量色散的朗道子带沿k(z)方向存在,且每个子带具有两个带边态。态密度反映了朗道子带的主要特征,如不对称的突出峰结构和半金属行为。在AA堆积构型下,朗道子带波函数由a和b两个子晶格表征。每个朗道子带的量子数(n(c,v))对应于主导载流子分布中的零点数量,由某个子晶格决定且与k(z)无关。对于每个朗道子带,a和b子晶格的零点数量之差是固定的且等于1。此外,得到了低能朗道子带能量的可靠近似解。通过观察该解,合理确定了朗道子带能量对场强和量子数的依赖关系、两个朗道子带之间与k(z)相关的能量间距以及原子跳跃积分的值。对AA堆积石墨烯超晶格和单层石墨烯的比较表明,它们具有一些相似的磁电性质。