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从头计算法研究 MgO 中 O 1s 芯电子结合能的相关效应。

Ab initio calculation of correlation effects for the O 1s core electron binding energy in MgO.

机构信息

Lehrstuhl für Theoretische Chemie, Ruhr-Universität Bochum, D-44780 Bochum, Germany.

出版信息

J Phys Condens Matter. 2012 Aug 1;24(30):305501. doi: 10.1088/0953-8984/24/30/305501. Epub 2012 Jul 4.

Abstract

Wavefunction based ab initio embedded cluster calculations are employed to calculate the O 1s core electron binding energies (CEBEs) of bulk MgO and the MgO(001) surface. A quantum cluster consisting of 61 atoms in five layers and embedded in a large point charge field is used for bulk MgO, the cluster for the MgO(001) surface is chosen accordingly. The O 1s CEBEs are calculated at the Koopmans' theorem (KT) and ΔSCF levels and with inclusion of correlation effects by means of the MC-CEPA method (multi-configuration coupled electron pair approximation), which is an approximate multi-reference coupled cluster approach. The correlation contributions to the O 1s CEBE of the central O atom due to the Mg atoms in the first and the O atoms in the second coordination shell turned out to be additive to a large extent. Therefore, they could be evaluated in an incremental fashion by a series of smaller calculations, where only a few atoms are included in the correlation treatment rather than all atoms of the first coordination shells or of the full quantum cluster. This makes the calculations feasible, even if large basis sets are used. The final results for the O 1s CEBEs are 533.47 and 533.50 eV for bulk MgO and the MgO(001) surface, to which electron correlation contributes 0.77 and 0.70 eV, respectively.

摘要

采用基于波函数的从头算嵌入簇方法计算体相 MgO 和 MgO(001)表面的 O 1s 芯电子结合能(CEBE)。对于体相 MgO,使用了一个由 61 个原子组成的五层量子簇,并嵌入在一个大的点电荷场中;对于 MgO(001)表面,相应地选择了一个簇。O 1s CEBE 是在 Koopmans 定理(KT)和 ΔSCF 水平下计算的,并通过 MC-CEPA 方法(多组态耦合电子对近似)考虑了相关效应,该方法是一种近似的多参考耦合簇方法。由于第一壳层中的 Mg 原子和第二配位壳层中的 O 原子对中心 O 原子的 O 1s CEBE 的相关贡献在很大程度上是可加的。因此,它们可以通过一系列较小的计算以增量方式进行评估,其中只有少数原子包括在相关处理中,而不是第一配位壳层或整个量子簇中的所有原子。这使得即使使用大的基组也可以进行计算。体相 MgO 和 MgO(001)表面的 O 1s CEBE 的最终结果分别为 533.47 和 533.50 eV,电子相关分别贡献了 0.77 和 0.70 eV。

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