Veerasubramanian Venkat, Beaudin Guillaume, Giguère Alexandre, Le Drogoff Boris, Aimez Vincent, Kirk Andrew G
McGill University, Montreal, QC, H3A 2A7, Canada.
Opt Express. 2012 Jul 2;20(14):15983-90. doi: 10.1364/OE.20.015983.
We report on the design, fabrication, and demonstration of waveguide coupled channel drop filters at 1550 nm, on a silicon-on-insulator (SOI) substrate. These devices rely on resonant power transfer from a bus waveguide to side-walled Bragg resonators with quarter-wave shifts in the middle. By employing a second mirror resonator, and a tap-off waveguide, reflections along the bus waveguide can be reduced, leading to realization of circulator-free resonance filters. These devices were fabricated on SOI using e-beam lithography and inductively coupled plasma (ICP) etching. Fabricated devices with two coupled cavities are demonstrated to have rejection ratios greater than 20 dB and 3-dB bandwidths of 110 GHz, close to the values predicted by numerical modeling. We also demonstrate power tap-off at resonance of around 16 dB.
我们报告了在绝缘体上硅（SOI）衬底上设计、制造并演示的1550 nm波导耦合信道下变频滤波器。这些器件依靠从总线波导到中间具有四分之一波长偏移的侧壁布拉格谐振器的谐振功率传输。通过采用第二个镜像谐振器和一个引出波导，可以减少沿总线波导的反射，从而实现无环行器的谐振滤波器。这些器件是在SOI上使用电子束光刻和电感耦合等离子体（ICP）蚀刻制造的。具有两个耦合腔的制造器件被证明具有大于20 dB的抑制比和110 GHz的3 dB带宽，接近数值模拟预测的值。我们还展示了在约16 dB的谐振点处的功率引出。
