Wang Xu, Shi Wei, Yun Han, Grist Samantha, Jaeger Nicolas A F, Chrostowski Lukas
Department of Electrical and Computer Engineering, University of British Columbia Vancouver, BC, V6T 1Z4, Canada.
Opt Express. 2012 Jul 2;20(14):15547-58. doi: 10.1364/OE.20.015547.
We demonstrate the design, fabrication and measurement of integrated Bragg gratings in a compact single-mode silicon-on-insulator ridge waveguide. The gratings are realized by corrugating the sidewalls of the waveguide, either on the ridge or on the slab. The coupling coefficient is varied by changing the corrugation width which allows precise control of the bandwidth and has a high fabrication tolerance. The grating devices are fabricated using a CMOS-compatible process with 193 nm deep ultraviolet lithography. Spectral measurements show bandwidths as narrow as 0.4 nm, which are promising for on-chip applications that require narrow bandwidths such as WDM channel filters. We also present the die-to-die nonuniformity for the grating devices on the wafer, and our analysis shows that the Bragg wavelength deviation is mainly caused by the wafer thickness variation.
我们展示了在紧凑的单模绝缘体上硅脊形波导中集成布拉格光栅的设计、制造和测量。光栅通过在波导的侧壁上形成波纹来实现，波纹可以在脊上或平板上。通过改变波纹宽度来改变耦合系数，这允许精确控制带宽并且具有高制造容差。光栅器件采用与CMOS兼容的工艺和193nm深紫外光刻技术制造。光谱测量显示带宽窄至0.4nm，这对于诸如波分复用（WDM）信道滤波器等需要窄带宽的片上应用很有前景。我们还展示了晶圆上光栅器件的芯片间不均匀性，并且我们的分析表明布拉格波长偏差主要是由晶圆厚度变化引起的。
