• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利：CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法，用中文像聊天一样搜索，搜遍4000万医学文献。AI智能推荐，让科研检索更轻松。

立即免费搜索

文件翻译

保留排版，准确专业，支持PDF/Word/PPT等文件格式，支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述，25分钟生成高质量综述，智能提取关键信息，辅助科研写作。

立即免费体验

通过提高外延生长温度增强Si(001)衬底上多层锗量子点的光致发光

Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature.

作者信息

Liu Zhi, Cheng Buwen, Hu Weixuan, Su Shaojian, Li Chuanbo, Wang Qiming

机构信息

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, QingHua East Road, Haidian District, Beijing, 100083, People's Republic of China.

出版信息

Nanoscale Res Lett. 2012 Jul 11;7(1):383. doi: 10.1186/1556-276X-7-383.

DOI:10.1186/1556-276X-7-383
PMID:22784702
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3442976/
Abstract

Four-bilayer Ge quantum dots (QDs) with Si spacers were grown on Si(001) substrates by ultrahigh vacuum chemical vapor deposition. In three samples, all Ge QDs were grown at 520 °C, while Si spacers were grown at various temperatures (520 °C, 550 °C, and 580 °C). Enhancement and redshift of room temperature photoluminescence (PL) were observed from the samples in which Si spacers were grown at a higher temperature. The enhancement of PL is explained by higher effective electrons capturing in the larger size Ge QDs. Quantum confinement of the Ge QDs is responsible for the redshift of PL spectra. The Ge QDs' size and content were investigated by atomic force microscopy and Raman scattering measurements.

摘要

通过超高真空化学气相沉积法在Si(001)衬底上生长了带有Si间隔层的四层Ge量子点（QDs）。在三个样品中，所有的Ge量子点均在520°C下生长，而Si间隔层则在不同温度（520°C、550°C和580°C）下生长。在Si间隔层于较高温度下生长的样品中观察到室温光致发光（PL）增强和红移。PL增强是由较大尺寸Ge量子点中更高的有效电子俘获来解释的。Ge量子点的量子限制导致了PL光谱的红移。通过原子力显微镜和拉曼散射测量研究了Ge量子点的尺寸和含量。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5ae7/3442976/296cbe9a1a8d/1556-276X-7-383-4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5ae7/3442976/3286883077c8/1556-276X-7-383-1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5ae7/3442976/e9df1e0ca7d6/1556-276X-7-383-2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5ae7/3442976/f11e105f2a55/1556-276X-7-383-3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5ae7/3442976/296cbe9a1a8d/1556-276X-7-383-4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5ae7/3442976/3286883077c8/1556-276X-7-383-1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5ae7/3442976/e9df1e0ca7d6/1556-276X-7-383-2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5ae7/3442976/f11e105f2a55/1556-276X-7-383-3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5ae7/3442976/296cbe9a1a8d/1556-276X-7-383-4.jpg

相似文献

1
Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature.通过提高外延生长温度增强Si(001)衬底上多层锗量子点的光致发光
Nanoscale Res Lett. 2012 Jul 11;7(1):383. doi: 10.1186/1556-276X-7-383.
2
O-Band Emitting InAs Quantum Dots Grown By MOCVD On A 300 mm Ge-Buffered Si (001) Substrate.通过金属有机化学气相沉积（MOCVD）在300毫米锗缓冲硅（001）衬底上生长的发射O波段的砷化铟量子点
Nanomaterials (Basel). 2020 Dec 7;10(12):2450. doi: 10.3390/nano10122450.
3
Impact of annealing on surface morphology and photoluminescence of self-assembled Ge and Si quantum dots.退火对自组装锗和硅量子点的表面形态及光致发光的影响
J Nanosci Nanotechnol. 2014 Jul;14(7):5266-71. doi: 10.1166/jnn.2014.8710.
4
Microstructure and optical response optimization of Ge/Si quantum dots transformed from the sputtering-grown Ge thin film by manipulating the thermal annealing.通过控制热退火对溅射生长的锗薄膜转变而成的锗/硅量子点的微观结构和光学响应进行优化。
Nanotechnology. 2018 Mar 2;29(9):095601. doi: 10.1088/1361-6528/aaa2dd.
5
Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique.采用磁控溅射技术研究不同锗沉积量下 Ge/Si 量子点的晶体生长。
Sci Rep. 2023 May 9;13(1):7511. doi: 10.1038/s41598-023-34284-8.
6
Promising modulation of self-assembled Ge-rich QDs by ultra-heavy phosphorus doping.通过超重磷掺杂对自组装富锗量子点进行有前景的调制。
Nanoscale. 2020 Jun 28;12(24):13137-13144. doi: 10.1039/d0nr00411a. Epub 2020 Jun 17.
7
Precise size separation of water-soluble red-to-near-infrared-luminescent silicon quantum dots by gel electrophoresis.凝胶电泳法精确分离水溶性近红外发光硅量子点。
Nanoscale. 2020 Apr 30;12(16):9266-9271. doi: 10.1039/d0nr02764b.
8
Promising features of low-temperature grown Ge nanostructures on Si(001) substrates.低温生长锗纳米结构在硅（001）衬底上的有前景的特性。
Nanotechnology. 2017 Mar 17;28(11):115701. doi: 10.1088/1361-6528/aa5b3d. Epub 2017 Jan 31.
9
Photoluminescence investigation of strictly ordered Ge dots grown on pit-patterned Si substrates.在具有坑图案的硅衬底上生长的严格有序锗量子点的光致发光研究。
Nanotechnology. 2015 Jun 5;26(22):225202. doi: 10.1088/0957-4484/26/22/225202. Epub 2015 May 13.
10
Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots.用锗量子点对多层硅/锗结构均匀性的拉曼光谱测定
Nanotechnology. 2009 Aug 26;20(34):345702. doi: 10.1088/0957-4484/20/34/345702. Epub 2009 Aug 4.

本文引用的文献

1
Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots.硅锗量子点上硅覆盖层中纳米坑的形成
Nanoscale Res Lett. 2011 Dec;6(1):59. doi: 10.1007/s11671-010-9811-y. Epub 2010 Oct 2.
2
Ge-on-Si laser operating at room temperature.室温下工作的 Ge-on-Si 激光。
Opt Lett. 2010 Mar 1;35(5):679-81. doi: 10.1364/OL.35.000679.
3
Efficient silicon light-emitting diodes.高效硅发光二极管。
Nature. 2001 Aug 23;412(6849):805-8. doi: 10.1038/35090539.