MIT Microphotonics Center, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
Opt Lett. 2010 Mar 1;35(5):679-81. doi: 10.1364/OL.35.000679.
Monolithic lasers on Si are ideal for high-volume and large-scale electronic-photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide semiconductor technology. Recently we have demonstrated room-temperature photoluminescence, electroluminescence, and optical gain from the direct gap transition of band-engineered Ge-on-Si using tensile strain and n-type doping. Here we report what we believe to be the first experimental observation of lasing from the direct gap transition of Ge-on-Si at room temperature using an edge-emitting waveguide device. The emission exhibited a gain spectrum of 1590-1610 nm, line narrowing and polarization evolution from a mixed TE/TM to predominantly TE with increasing gain, and a clear threshold behavior.
硅基单片激光器非常适合大规模和大批量的电子光子集成。锗由于其赝直接带隙特性和与硅互补金属氧化物半导体技术的兼容性，是一种很有前途的材料。最近，我们已经证明了通过拉伸应变和 n 型掺杂，在带工程化的锗硅上可以实现室温下的直接带隙跃迁的光致发光、电致发光和光学增益。在这里，我们报告了在室温下使用边缘发射波导器件从锗硅的直接带隙跃迁中首次观察到激光的实验结果。发射表现出 1590-1610nm 的增益光谱，随着增益的增加，从混合 TE/TM 到主要 TE 的线宽变窄和偏振演化，以及明显的阈值行为。
