Suenaga Kazu, Akiyama-Hasegawa Kotone, Niimi Yoshiko, Kobayashi Haruka, Nakamura Midori, Liu Zheng, Sato Yuta, Koshino Masanori, Iijima Sumio
Nanotube Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Central 5, 1-1-1 Higashi, Tsukuba, Japan.
J Electron Microsc (Tokyo). 2012;61(5):285-91. doi: 10.1093/jmicro/dfs054. Epub 2012 Jul 18.
Identification of individual atoms and examination of their electronic properties in materials are the ultimate goal of all microscopy-based analytical techniques. Here, we demonstrate successful single-atom imaging and spectroscopy in low-dimensional materials using (scanning) transmission electron microscopy together with electron energy-loss spectroscopy (EELS). Edges and point defects in single-layered materials such as graphene, hexagonal boron nitride and WS(2) nanoribbons are investigated by annular dark-field imaging and EELS fine-structure analysis. Individual dopant atoms are unambiguously identified in nano-peapods. It is noteworthy that irradiation damage and specimen contamination even at the single-atom level are crucial issues in these experiments.
识别材料中的单个原子并研究其电子特性是所有基于显微镜的分析技术的最终目标。在此,我们展示了使用(扫描)透射电子显微镜结合电子能量损失谱(EELS)在低维材料中成功实现单原子成像和光谱分析。通过环形暗场成像和EELS精细结构分析,对诸如石墨烯、六方氮化硼和WS(2)纳米带等单层材料中的边缘和点缺陷进行了研究。在纳米豆荚中明确识别出了单个掺杂原子。值得注意的是,即使在单原子水平上的辐照损伤和样品污染也是这些实验中的关键问题。