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在受应力纳米线模板中控制铁磁接触的结晶度和磁畴各向异性。

Crystallinity control of ferromagnetic contacts in stressed nanowire templates and the magnetic domain anisotropy.

机构信息

Department of Materials Science and Engineering, University of California, Los Angeles , Los Angeles, California, USA.

出版信息

Nano Lett. 2012 Aug 8;12(8):4341-8. doi: 10.1021/nl302113r. Epub 2012 Jul 30.

Abstract

We report the controlled growth of single-crystalline ferromagnetic contacts through solid state reaction at nanoscale. Single-crystal Mn(5)Si(3) and Fe(5)Ge(3) contacts were grown within stressed Si and Ge nanowire templates, where oxide-shells were used to exert compressive stress on the silicide or germanide. Compared to polycrystalline silicide and germanide structures observed within bare nanowires, the built-in high strain in the oxide-shelled nanostructures alters the nucleation behavior of the ferromagnetic materials, leading to single crystal growth in the transverse/radial direction. Interestingly, the compressive stress is also found to affect the magnetic anisotropy of the ferromagnetic contacts. In-plane and out-of-plane magnetization were observed in Fe(5)Ge(3) for different crystal orientations, showing distinctly preferred domain orientations. These interesting results display the capability to control both the crystallinity and the magnetic anisotropy of ferromagnetic contacts in engineered nanostructures.

摘要

我们通过固态反应在纳米尺度上实现了单晶铁磁接触的可控生长。在受应力的 Si 和 Ge 纳米线模板内生长出单晶 Mn(5)Si(3)和 Fe(5)Ge(3)接触,其中氧化物壳层对硅化物或锗化物施加压缩应力。与在裸露纳米线内观察到的多晶硅化物和锗化物结构相比,氧化物壳层纳米结构中的内置高应变改变了铁磁材料的成核行为,导致在横向/径向方向上的单晶生长。有趣的是,压缩应力也被发现会影响铁磁接触的磁各向异性。在不同的晶体取向中观察到 Fe(5)Ge(3)中的面内和面外磁化,表现出明显的优先畴取向。这些有趣的结果显示了在工程纳米结构中控制铁磁接触的结晶度和磁各向异性的能力。

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