Physikalisches Institut and Center for Nanotechnology, Universität Münster, Germany.
Acc Chem Res. 2012 Oct 16;45(10):1646-56. doi: 10.1021/ar200299w. Epub 2012 Jul 25.
Over the last two decades, organic semiconductors have attracted increasing attention because of the applications of their inorganic counterparts in a growing number of devices. At the same time, the further success of these materials will require device processing techniques for organic semiconductors that produce high performance and high integration over large areas. Conventional top-down patterning techniques based on photolithography have served powerful methods for the surface patterning of inorganic materials. However, researchers cannot simply transfer these techniques to organic semiconductors because organic semiconductors can include small, fragile organic molecules. Alternatively, researchers have developed several nonconventional techniques, including shadow mask, printing, and vapor jet writing. However, no leading technique has emerged, and researchers are still trying to realize batch-to-batch, and even device-to-device, reproducibility. This Account summarizes recent research in our group aimed at developing methods for patterning small organic molecules that are compatible with standard device processing procedures for inorganic semiconductors. Our concept is based on classic growth dynamics by gas-phase deposition but leads to different selective growth mechanisms: "pre-patterning and patterned growth" instead of the traditional "film growth and patterning." As a result, both "foreign body" and "step edge", two possible nucleation positions for atoms and molecules during thin film growth process, can be enlarged to the mesotropic scale to define molecules within pre-determined areas. The techniques can do more than patterning. We demonstrate that these techniques can produce heteropatterning of organic structures that cannot be obtained by conventional photolithography and printing techniques. Through a combination of different growth modes, we can separate molecules at given locations on the mesotropic scale, which could lead to applications in the production of organic solar cells. Taking advantage of the differences in emission of molecules in different aggregation states, we can achieve tunable single, double- and triple-color patterns using two types of molecules. We also show that these materials can lead to devices with improved performance in features such as carrier mobility. In addition, we believe that this new photographic compatible procedure in small molecular organic semiconductors can address some issues in device performance, such as carrier transport in organic field effect transistors, by controlling domain size and numbers, and allow researchers to explore new nanoscale properties of these materials. The techniques are still in their infancy, and further research is needed to make them applicable, such as transferring the technology to cheap substrates, for example, glass and flexible plastic. For organic electronics, high-level integration, addressable, and cross-talk free device arrays are critical for producing high-performance devices at a low fabrication cost.
在过去的二十年中,由于无机半导体在越来越多的器件中的应用,有机半导体受到了越来越多的关注。同时,这些材料的进一步成功将需要用于有机半导体的器件处理技术,这些技术能够在大面积上产生高性能和高集成度。基于光刻的传统自上而下的图案化技术是用于无机材料表面图案化的强大方法。然而,由于有机半导体可能包括小而脆弱的有机分子,研究人员不能简单地将这些技术转移到有机半导体上。相反,研究人员已经开发出几种非传统技术,包括掩模、印刷和蒸汽喷射书写。然而,没有一种领先的技术出现,研究人员仍在努力实现批到批,甚至是器件到器件的可重复性。本账目总结了我们小组最近的研究,旨在开发与无机半导体标准器件处理程序兼容的小有机分子的图案化方法。我们的概念基于气相沉积的经典生长动力学,但导致了不同的选择性生长机制:“预图案化和图案化生长”而不是传统的“薄膜生长和图案化”。因此,在薄膜生长过程中,原子和分子的两个可能的成核位置“外来体”和“台阶边缘”都可以扩大到介稳尺度,以在预定区域内定义分子。该技术不仅可以进行图案化。我们证明,这些技术可以产生通过传统的光刻和印刷技术无法获得的有机结构的异质图案化。通过不同生长模式的组合,我们可以在介稳尺度上的给定位置分离分子,这可能导致在有机太阳能电池的生产中的应用。利用不同聚集态分子的发射差异,我们可以使用两种类型的分子实现可调谐的单、双和三色彩色图案。我们还表明,这些材料可以导致在载流子迁移率等方面性能得到改善的器件。此外,我们认为这种新型的小分子有机半导体照相兼容工艺可以通过控制畴大小和数量来解决有机场效应晶体管中的载流子输运等器件性能问题,并允许研究人员探索这些材料的新纳米级特性。该技术仍处于起步阶段,需要进一步研究使其能够应用,例如将技术转移到廉价衬底上,例如玻璃和柔性塑料。对于有机电子学,高集成度、可寻址且无串扰的器件阵列对于以低成本制造高性能器件至关重要。