Shin Younghwan, Jeong Seonju, Kwon Hyeok Yong, Han Yoon Soo, Kwon Younghwan
Department of Chemical Engineering, Daegu University, Gyeongbuk 712-714, Korea.
J Nanosci Nanotechnol. 2012 May;12(5):4233-7. doi: 10.1166/jnn.2012.5900.
We demonstrate the synthesis of a transparent, polymeric n-type material (M1) consisting of C60 pendant and UV curable groups in side chains. This material (M1) is employed as a polymeric n-type interfacial buffer layer for an efficient inverted bulk heterojunction (BHJ) photovoltaic device based on regioregular poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PC61BM) active layer. Under simulated solar illumination of AM 1.5G (100 mW/cm2), the highest efficient devices fabricated with a configuration of ITO/interfacial buffer layer (M1,10 nm)/P3HT:PC61BM (1:0.9 w:w) (120 nm)/PEDOT:PSS (30 nm)/Ag (100 nm) achieve an average power conversion efficiency PCE of 2.16%, with short-circuit current J(SC) = 6.70 mA/cm2, fill factor FF = 54.2%, and open-circuit voltage V(OC) = 0.60 V. This result is comparable to the inverted BHJ photovoltaic devices fabricated with Cs2CO3, one of widely used as a buffer layer. The synthesized M1 have thus proven to be promising polymeric interfacial buffer layer for high efficient BHJ photovoltaic devices.
我们展示了一种透明的聚合物n型材料（M1）的合成，该材料由C60侧基和侧链中的紫外光固化基团组成。这种材料（M1）被用作基于区域规整聚（3-己基噻吩）：[6,6]-苯基C61丁酸甲酯（P3HT:PC61BM）活性层的高效倒置体异质结（BHJ）光伏器件的聚合物n型界面缓冲层。在AM 1.5G（100 mW/cm2）的模拟太阳光照下，采用ITO/界面缓冲层（M1，10 nm）/P3HT:PC61BM（1:0.9 w:w）（120 nm）/PEDOT:PSS（30 nm）/Ag（100 nm）结构制备的最高效器件实现了2.16%的平均功率转换效率PCE，短路电流J(SC)=6.70 mA/cm2，填充因子FF = 54.2%，开路电压V(OC)=0.60 V。该结果与用广泛用作缓冲层之一Cs2CO3制备的倒置BHJ光伏器件相当。因此，合成材料M1已被证明是用于高效BHJ光伏器件的有前景的聚合物界面缓冲层。
