Efficient inverted bulk heterojunction photovoltaic devices using a transparent polymeric interfacial buffer layer with C60 pendant and UV curable groups.

We demonstrate the synthesis of a transparent, polymeric n-type material (M1) consisting of C60 pendant and UV curable groups in side chains. This material (M1) is employed as a polymeric n-type interfacial buffer layer for an efficient inverted bulk heterojunction (BHJ) photovoltaic device based on regioregular poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PC61BM) active layer. Under simulated solar illumination of AM 1.5G (100 mW/cm2), the highest efficient devices fabricated with a configuration of ITO/interfacial buffer layer (M1,10 nm)/P3HT:PC61BM (1:0.9 w:w) (120 nm)/PEDOT:PSS (30 nm)/Ag (100 nm) achieve an average power conversion efficiency PCE of 2.16%, with short-circuit current J(SC) = 6.70 mA/cm2, fill factor FF = 54.2%, and open-circuit voltage V(OC) = 0.60 V. This result is comparable to the inverted BHJ photovoltaic devices fabricated with Cs2CO3, one of widely used as a buffer layer. The synthesized M1 have thus proven to be promising polymeric interfacial buffer layer for high efficient BHJ photovoltaic devices.