State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, People's Republic of China.
Nanoscale Res Lett. 2012 Aug 17;7(1):463. doi: 10.1186/1556-276X-7-463.
We report that vertically aligned molybdenum (Mo) nanowalls can grow on various substrates by simple thermal vapor deposition. Individual nanowalls have a typical thickness of about 50 nm and very good conductivity with a typical average value of about 1.97 × 104 Ω-1 cm-1, i.e., only an order of magnitude less than the value of bulk Mo. The formation process is characterized in detail, and it is found that Mo nanowalls grow from nanorods through nanotrees. The atomic arrangement, lattice mismatch relationship, and competition growth are all believed to contribute to the growth mechanism. The field emission performance is attractive, typically with a very low fluctuation of about approximately 1.18% at a high current density level of 10 mA/cm2, and a sustainably stable very large current density of approximately 57.5 mA/cm2 was recorded. These indicate that the Mo nanowall is a potential candidate as a cold cathode for application in vacuum electron devices, which demand both a high current and high current density.
我们报告称，通过简单的热气相沉积，垂直排列的钼（Mo）纳米墙可以在各种基底上生长。单个纳米墙的典型厚度约为 50nm，具有非常好的导电性，典型平均值约为 1.97×104 Ω-1 cm-1，即仅比体相 Mo 的值小一个数量级。详细描述了形成过程，发现 Mo 纳米墙是通过纳米棒生长成纳米树的。原子排列、晶格失配关系和竞争生长都被认为对生长机制有贡献。场发射性能很吸引人，通常在 10 mA/cm2 的高电流密度下具有非常低的波动，约为 1.18%，并且记录到可持续稳定的非常大的电流密度约为 57.5 mA/cm2。这表明 Mo 纳米墙是一种潜在的冷阴极候选材料，可应用于需要高电流和高电流密度的真空电子器件。
