Vaddiraju Sreeram, Chandrasekaran Hari, Sunkara Mahendra K
Department of Chemical Engineering, University of Louisville, Louisville, Kentucky 40292, USA.
J Am Chem Soc. 2003 Sep 10;125(36):10792-3. doi: 10.1021/ja035868e.
A concept is presented for synthesizing metal nanowires directly from the vapor phase using chemical vapor transport to temperatures higher than the corresponding metal oxide decomposition temperature. Specifically, this concept is demonstrated with the synthesis of tungsten metal nanowires with sizes ranging from 70 to 40 nm by increasing the condensation temperature. The simultaneous condensation and decomposition of the tungsten oxide species during nucleation and growth is suggested for 1-D growth of metallic tungsten nanowires. This synthesis concept could potentially be extended to the vapor phase synthesis of metal nanowires of several other nonvolatile and refractory metals. The tungsten nanowires could find potential applications in gas sensors and as electron sources in electron microscopes.
提出了一种利用化学气相传输将金属纳米线直接从气相合成至高于相应金属氧化物分解温度的温度的概念。具体而言,通过提高冷凝温度,以70至40纳米的尺寸合成钨金属纳米线来证明这一概念。在金属钨纳米线的一维生长过程中,建议在成核和生长过程中同时发生氧化钨物种的冷凝和分解。这种合成概念有可能扩展到其他几种难熔金属纳米线的气相合成。钨纳米线在气体传感器以及电子显微镜中的电子源方面可能有潜在应用。