She Juncong, Xiao Zhiming, Yang Yuhua, Deng Shaozhi, Chen Jun, Yang Guowei, Xu Ningsheng
State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, People's Republic of China.
ACS Nano. 2008 Oct 28;2(10):2015-22. doi: 10.1021/nn800283u.
Both electrical and field emission measurements were carried out to study the correlation between resistance and field emission performance of individual one-dimensional (1D) ZnO nanostructures. Three types of 1D ZnO nanostructures were investigated (i.e., agave-like shape, pencil-like shape, and hierarchical structure) and were prepared by thermal chemical vapor transport and condensation without using any catalyst. The 1D ZnO nanostructures have obvious differences in resistance and thus conductivity from type to type. In addition, in the same type of 1D ZnO nanostructure, each individual emitter may also have variation in resistance and thus in conductivity. The field emission performance of the ZnO emitters was found to be strongly correlated with the resistance of each individual ZnO nanostructure: (i) a ZnO emitter with low resistance will have better emission; (ii) a high resistance region in a ZnO nanostructure is liable to the initiation of a vacuum breakdown event. The results indicate that, besides the uniformity in the geometrical structure, the uniformity in conductivity of the emitters in an array should be ensured, in order to meet the requirement of device application.
进行了电学和场发射测量，以研究单个一维（1D）ZnO纳米结构的电阻与场发射性能之间的相关性。研究了三种类型的一维ZnO纳米结构（即龙舌兰状、铅笔状和分级结构），并通过热化学气相传输和冷凝制备，未使用任何催化剂。不同类型的一维ZnO纳米结构在电阻以及由此产生的电导率方面存在明显差异。此外，在同一类型的一维ZnO纳米结构中，每个单独的发射体在电阻以及由此产生的电导率方面也可能存在变化。发现ZnO发射体的场发射性能与每个单独的ZnO纳米结构的电阻密切相关：（i）电阻低的ZnO发射体将具有更好的发射性能；（ii）ZnO纳米结构中的高电阻区域容易引发真空击穿事件。结果表明，为了满足器件应用的要求，除了几何结构的均匀性外，还应确保阵列中发射体电导率的均匀性。
