GaN/AlN 纳米线超晶格中的声子模式和声子带隙。

Acoustic phonon modes and phononic bandgaps in GaN/AlN nanowire superlattices.

机构信息

Department of Applied Physics, Hokkaido University, Kita 13 Nishi 8, Kita-ku, Sapporo, 060-8628, Japan.

出版信息

Nanoscale Res Lett. 2012 Aug 23;7(1):479. doi: 10.1186/1556-276X-7-479.

DOI:10.1186/1556-276X-7-479

PMID:22916993

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3499139/

Abstract

: We study numerically the phonon dispersion relations and corresponding displacement fields for a circular cross-section nanowire superlattices consisting of anisotropic GaN and AlN. We determine a set of parameters which gives complete phononic bandgaps. The results suggest the potential for manipulating phonons in the micro/nano electromechanical systems.

摘要

我们通过数值方法研究了由各向异性 GaN 和 AlN 组成的圆形截面纳米线超晶格的声子色散关系和相应的位移场。我们确定了一组参数，这些参数给出了完整的声子带隙。研究结果表明，在微/纳机电系统中操纵声子是可能的。