V P & R P T P Science College, Vallabh Vidyanagar, 388 120 Gujarat, India.
J Chem Phys. 2012 Aug 21;137(7):074311. doi: 10.1063/1.4745848.
We report electron impact total cross sections, Q(T), for e-N(2)O scattering over an extensive range of impact energies approximately from 0.1 eV to 2000 eV. We employ an ab initio calculation using R-matrix formalism below the ionization threshold of the target and above it we use the well established spherical complex optical potential to compute the cross sections. Total cross section is obtained as a sum of total elastic and total electronic excitation cross sections below the ionization threshold and above the ionization threshold as a sum of total elastic and total inelastic cross sections. Ample cross section data for e-N(2)O scattering are available at low impact energies and hence meaningful comparisons are made. Good agreement is observed with the available theoretical as well as experimental results over the entire energy range studied here.
我们报告了电子- N 2 O 散射的总截面 Q(T)，在从 0.1 eV 到 2000 eV 的广泛能量范围内。我们使用低于目标电离阈值的 R 矩阵公式进行从头计算，而在高于阈值的情况下，我们使用成熟的球型复光学势来计算截面。总截面是在低于电离阈值的情况下，通过总弹性和总电子激发截面的总和得到的，而在高于电离阈值的情况下，则是通过总弹性和总非弹性截面的总和得到的。在低碰撞能量下，有大量的 e-N 2 O 散射的截面数据，因此可以进行有意义的比较。在整个研究的能量范围内，我们观察到与现有理论和实验结果的良好一致性。
