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在脑深部电刺激手术中通过单个骨孔固定双侧同侧电极:技术说明

Securing dual ipsilateral leads through a single burr hole in deep brain stimulation surgery: technical note.

作者信息

Potts Mathew B, Larson Paul S

机构信息

Department of Neurological Surgery, University of California, San Francisco, CA 94143-0112, USA.

出版信息

Stereotact Funct Neurosurg. 2012;90(6):361-4. doi: 10.1159/000339634. Epub 2012 Aug 23.

Abstract

Deep brain stimulation (DBS) surgery typically involves placement of a single lead through a burr hole, either unilaterally or bilaterally. Rare indications, however, call for placement of 2 ipsilateral leads. To date, there have been no technical descriptions of how best to secure dual ipsilateral leads to the skull. We describe a method of placing and securing 2 ipsilateral DBS leads through a single burr hole using standard cranial plating equipment and a simple modification to a burr hole-mounted anchoring ring. This method has been used safely in 6 patients without detectable displacement of the first lead during implantation of the second lead.

摘要

脑深部电刺激(DBS)手术通常通过颅骨钻孔单侧或双侧植入一根电极。然而,在罕见情况下,需要同侧植入两根电极。迄今为止,尚无关于如何将两根同侧电极最佳固定于颅骨的技术描述。我们描述了一种使用标准颅骨固定设备并对钻孔安装的固定环进行简单改良,通过单个颅骨钻孔放置并固定两根同侧DBS电极的方法。该方法已在6例患者中安全使用,在植入第二根电极期间第一根电极未出现可检测到的移位。

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