Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, PR China.
ACS Appl Mater Interfaces. 2012 Sep 26;4(9):4841-5. doi: 10.1021/am301174a. Epub 2012 Sep 4.
Large-area P-N heterojunction organic semiconductor nanowire combined (4-hexyloxybenzoyl)butylsaure methyl amide (H-t-B) and Poly (3-hexylthiophene) (P3HT) were fabricated and the morphology and photoelectric properties were investigated by the growth of composition. The performance of light on/off switching of the H-t-B/P3HT heterojunction nanowire arrays was measured by the light irradiation on and off, the current in the devices showed two distinct states, the current was only 0.34 μA in the dark, while the current can reach 1.37 μA under the illumination of 45 mW/cm(2). The on/off switching ratio for the device of the heterojunction nanowire arrays is about 4.03.
大面积 P-N 异质结有机半导体纳米线结合（4-己氧基苯甲酰基）丁酸甲酯（H-t-B）和聚（3-己基噻吩）（P3HT）被制备，并通过组成的生长来研究形貌和光电性能。通过光的照射和关闭，测量了 H-t-B/P3HT 异质结纳米线阵列的光开/关切换性能，器件中的电流表现出两种明显的状态，在黑暗中电流仅为 0.34 μA，而在 45 mW/cm(2)的光照下电流可达 1.37 μA。异质结纳米线阵列器件的开/关切换比约为 4.03。
