Aix Marseille University, CNRS, LP UMR, Marseille, France.
Chemphyschem. 2012 Nov 12;13(16):3707-13. doi: 10.1002/cphc.201200406. Epub 2012 Aug 28.
Highly-ordered Fe-doped TiO(2) nanotubes (TiO(2)nts) were fabricated by anodization of co-sputtered Ti-Fe thin films in a glycerol electrolyte containing NH(4)F. The as-sputtered Ti-Fe thin films correspond to a solid solution of Ti and Fe according to X-ray diffraction. The Fe-doped TiO(2)nts were studied in terms of composition, morphology and structure. The characterization included scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, UV/Vis spectroscopy, X-ray photoelectron spectroscopy and Mott-Schottky analysis. As a result of the Fe doping, an indirect bandgap of 3.0 eV was estimated using Tauc's plot, and this substantial red-shift extends its photoresponse to visible light. From the Mott-Schottky analysis, the flat-band potential (E(fb)) and the charge carrier concentration (N(D)) were determined to be -0.95 V vs Ag/AgCl and 5.0×10(19) cm(-3) respectively for the Fe-doped TiO(2)nts, whilst for the undoped TiO(2)nts, E(fb) of -0.85 V vs Ag/AgCl and N(D) of 6.5×10(19) cm(-3) were obtained.
高度有序的掺铁 TiO(2) 纳米管（TiO(2)nts）是通过在含有 NH(4)F 的甘油电解质中对共溅射的 Ti-Fe 薄膜进行阳极氧化制备的。根据 X 射线衍射，溅射的 Ti-Fe 薄膜对应于 Ti 和 Fe 的固溶体。用扫描电子显微镜、能谱、X 射线衍射、紫外可见光谱、X 射线光电子能谱和 Mott-Schottky 分析对掺铁 TiO(2)nts 的组成、形貌和结构进行了研究。结果表明，由于 Fe 的掺杂，使用 Tauc 图估计出间接带隙为 3.0 eV，这一显著的红移使其光响应扩展到可见光。从 Mott-Schottky 分析中，确定掺铁 TiO(2)nts 的平带电位（E(fb)）和电荷载流子浓度（N(D)）分别为-0.95 V 相对于 Ag/AgCl 和 5.0×10(19) cm(-3)，而未掺杂的 TiO(2)nts 的 E(fb)为-0.85 V 相对于 Ag/AgCl 和 N(D)为 6.5×10(19) cm(-3)。
