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在强激光场作用下闪锌矿结构 InGaN-GaN 量子阱中的激子性质。

Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields.

机构信息

Instituto de Física, Universidad de Antioquia, Medellin, AA 1226, Colombia.

出版信息

Nanoscale Res Lett. 2012 Aug 31;7(1):492. doi: 10.1186/1556-276X-7-492.

DOI:10.1186/1556-276X-7-492
PMID:22937963
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3499168/
Abstract

: In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external influences as well as of the changes in the geometry of the heterostructure on the exciton binding energy are discussed in detail.

摘要

: 在这项工作中，我们使用变分技术研究了闪锌矿 InGaN/GaN 量子阱中的激子态。该系统在强激光场的作用下被考虑，并结合了直流电场作为附加外部探针。详细讨论了这些外部影响以及异质结构几何形状的变化对激子束缚能的影响。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9e/3499168/7306afb48148/1556-276X-7-492-5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9e/3499168/6ef315459d9f/1556-276X-7-492-1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9e/3499168/fce78cf3446d/1556-276X-7-492-2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9e/3499168/dca4b9a102ed/1556-276X-7-492-3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9e/3499168/8c7e746d0af9/1556-276X-7-492-4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9e/3499168/7306afb48148/1556-276X-7-492-5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9e/3499168/6ef315459d9f/1556-276X-7-492-1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9e/3499168/fce78cf3446d/1556-276X-7-492-2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9e/3499168/dca4b9a102ed/1556-276X-7-492-3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9e/3499168/8c7e746d0af9/1556-276X-7-492-4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9e/3499168/7306afb48148/1556-276X-7-492-5.jpg

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