Lemos V, Silveira E, Leite JR, Tabata A, Trentin R, Scolfaro LM, Frey T, As DJ, Schikora D, Lischka K
Instituto de Fisica "Gleb Wataghin," Universidade Estadual de Campinas, 13083-970 Campinas-SP, Brazil.
Phys Rev Lett. 2000 Apr 17;84(16):3666-9. doi: 10.1103/PhysRevLett.84.3666.
The emission of light in the blue-green region from cubic InxGa1-xN alloys grown by molecular beam epitaxy is observed at room temperature and 30 K. By using selective resonant Raman spectroscopy (RRS) we demonstrate that the emission is due to quantum confinement effects taking place in phase-separated In-rich quantum dots formed in the layers. RRS data show that the In content of the dots fluctuates across the volume of the layers. We find that dot size and alloy fluctuation determine the emission wavelengths.
通过分子束外延生长的立方InxGa1-xN合金在室温及30 K温度下观测到蓝绿色区域的光发射。利用选择性共振拉曼光谱（RRS），我们证明该发射是由于在层中形成的相分离富铟量子点中发生的量子限制效应所致。RRS数据表明，量子点的铟含量在整个层体积内波动。我们发现，量子点尺寸和合金波动决定了发射波长。
