Han Jubong, Lee K B, Park T S, Lee J M, Oh P J, Lee S H, Kang Y S, Ahn J K
Korea Research Institute of Standards and Science, Daejeon 305-600, Republic of Korea.
Appl Radiat Isot. 2012 Nov;70(11):2581-5. doi: 10.1016/j.apradiso.2012.07.015. Epub 2012 Aug 2.
The half-life of (18)F has been measured using HPGe detectors with a (137)Cs reference source. The counting ratio of 511 keV γ-rays from (18)F to 622 keV γ-rays from (137)Cs was fitted for the half-life with a weighted least-square method. Uncertainties due to the systematic effects arising from the measurement of a high activity (18)F source were studied in detail. The half-life of (18)F was found to be (109.72±0.19) min. The result is in a good agreement with the recommended value of (109.728±0.019) min evaluated at the Laborotaire National Henri Becquerel (LNHB).
已使用配备有（137）Cs参考源的高纯锗探测器测量了（18）F的半衰期。采用加权最小二乘法将来自（18）F的511keVγ射线与来自（137）Cs的622keVγ射线的计数率拟合成半衰期。详细研究了高活度（18）F源测量中系统效应引起的不确定度。发现（18）F的半衰期为（109.72±0.19）分钟。该结果与在国家亨利·贝克勒尔实验室（LNHB）评估的推荐值（109.728±0.019）分钟高度吻合。
