School of Electronic and Electrical Engineering and Sungkyunkwan University Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, Republic of Korea.
J Phys Condens Matter. 2012 Sep 26;24(38):385301. doi: 10.1088/0953-8984/24/38/385301. Epub 2012 Sep 3.
We study the magnetotransport of a GaAs/AlGaAs quantum well with self-assembled InAs quantum dots. Negative magnetoresistance is observed at low field and analysed by weak localization theory. The temperature dependence of the extracted dephasing rate is linear, which shows that the inelastic electron-electron scattering processes with small energy transfer are the dominant contribution in breaking the electron phase coherence. The results are compared with those of a reference sample that contains no quantum dots.
我们研究了具有自组装 InAs 量子点的 GaAs/AlGaAs 量子阱的磁输运性质。在低场下观察到负磁阻，并通过弱局域化理论进行了分析。提取的退相率随温度的变化呈线性关系，表明小能量转移的非弹性电子-电子散射过程是破坏电子相位相干性的主要贡献。结果与不含量子点的参考样品进行了比较。
