Sheng Weidong, Leburton Jean-Pierre
Beckman Institute for Advanced Science and Technology and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA.
Phys Rev Lett. 2002 Apr 22;88(16):167401. doi: 10.1103/PhysRevLett.88.167401. Epub 2002 Apr 9.
Vertically stacked and coupled InAs/GaAs self-assembled quantum dots (SADs) are predicted to exhibit strong hole localization even with vanishing separation between the dots, and a nonparabolic dependence of the interband transition energy on the electric field, which is not encountered in single SAD structures. Our study based on an eight-band strain-dependent k x p Hamiltonian indicates that this anomalous quantum confined Stark effect is caused by the three-dimensional strain field distribution which influences drastically the hole states in the stacked SAD structures.
垂直堆叠且耦合的InAs/GaAs自组装量子点（SADs）预计即使在量子点之间的间距消失时也会表现出强烈的空穴局域化，以及带间跃迁能量对电场的非抛物线依赖性，这在单个SAD结构中是不会出现的。我们基于八能带应变相关的k·p哈密顿量的研究表明，这种反常的量子限制斯塔克效应是由三维应变场分布引起的，该分布极大地影响了堆叠SAD结构中的空穴态。
