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在石墨烯片上的电压驱动环约束:束缚态解的条件评估。

Voltage-driven ring confinement in a graphene sheet: assessing conditions for bound state solutions.

机构信息

Departamento de Física, Universidade Federal de São Carlos, São Carlos, São Paulo, Brazil.

出版信息

Nanotechnology. 2012 Sep 28;23(38):385201. doi: 10.1088/0957-4484/23/38/385201. Epub 2012 Sep 4.

Abstract

We have systematically studied the single-particle states in quantum rings produced by a set of concentric circular gates over a graphene sheet placed on a substrate. The resulting potential profiles and the interaction between the graphene layer and the substrate are considered within the Dirac Hamiltonian in the framework of the envelope function approximation. Our simulations allow microscopic mapping of the character of the electron and hole quasi-particle solutions according to the applied voltage. General conditions to control and operate the bound state solutions are described as functions of external and controllable parameters that will determine the optical properties ranging from metallic to semiconductor phases. Contrasting behaviors are obtained when comparing the results for repulsive and attractive voltages as well as for variation of the relative strength of the graphene-substrate coupling parameter.

摘要

我们系统性地研究了在置于衬底上的石墨烯片上的一组同心圆形栅极产生的量子环中的单粒子态。在狄拉克哈密顿量的框架内,根据包络函数近似法,我们考虑了由此产生的势轮廓以及石墨烯层与衬底之间的相互作用。我们的模拟允许根据施加的电压对电子和空穴准粒子解的特征进行微观映射。作为外部和可控参数的函数,描述了控制和操作束缚态解的一般条件,这些参数将决定从金属到半导体相的光学性质。当比较排斥和吸引电压以及石墨烯-衬底耦合参数的相对强度变化的结果时,会得到相反的行为。

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