Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG, 30123-970, Brazil.
J Phys Condens Matter. 2010 Aug 25;22(33):334204. doi: 10.1088/0953-8984/22/33/334204. Epub 2010 Aug 4.
Raman scattering is used to study the effect of low energy (90 eV) Ar(+) ion bombardment in graphene samples as a function of the number of layers N. The evolution of the intensity ratio between the G band (1585 cm(-1)) and the disorder-induced D band (1345 cm(-1)) with ion fluence is determined for mono-, bi-, tri- and ∼50-layer graphene samples, providing a spectroscopy-based method to study the penetration of these low energy Ar(+) ions in AB Bernal stacked graphite, and how they affect the graphene sheets. The results clearly depend on the number of layers. We also analyze the evolution of the overall integrated Raman intensity and the integrated intensity for disorder-induced versus Raman-allowed peaks.
拉曼散射被用于研究低能（90 eV）Ar(+)离子轰击对石墨烯样品的影响，作为层数 N 的函数。对于单层、双层、三层和约 50 层的石墨烯样品，通过离子通量确定了 G 带（1585 cm(-1))和无序诱导的 D 带（1345 cm(-1))之间的强度比的演化，提供了一种基于光谱的方法来研究这些低能 Ar(+)离子在 AB 堆积石墨中的穿透以及它们如何影响石墨烯片。结果明显取决于层数。我们还分析了整体积分拉曼强度以及无序诱导与拉曼允许峰的积分强度的演变。
