通过冷壁化学气相沉积法在镍箔和铜箔上直接沉积少层石墨烯。

Few-layer graphene direct deposition on Ni and Cu foil by cold-wall chemical vapor deposition.

作者信息

Chang Q H, Guo G L, Wang T, Ji L C, Huang L, Ling B, Yang H F

机构信息

Key Laboratory of Optoelectronic Materials and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China.

出版信息

J Nanosci Nanotechnol. 2012 Aug;12(8):6516-20. doi: 10.1166/jnn.2012.5432.

DOI:10.1166/jnn.2012.5432

PMID:22962776

Abstract

We report an alternative synthesis process, cold-wall thermal chemical vapor deposition (CVD), is replied to directly deposit single-layer and few-layer graphene films on Ar plasma treated Ni and Cu foils using CH4 as carbon source. Through optimizing the process parameters, large scale single-layer graphene grown on Ni foil is comparable to that grown on Cu foil. The graphene films were able to be transferred to other substrates such as SiO2/Si, flexible transparent PET and verified by optical microscopy, Raman microscopy and scanning electron microscopy. The sheet resistance and transmission of the transferred graphene films on PET substrate were also discussed.

摘要

我们报道了一种替代合成工艺，即冷壁热化学气相沉积（CVD），该工艺用于以CH4作为碳源，直接在经氩等离子体处理的镍箔和铜箔上沉积单层和少层石墨烯薄膜。通过优化工艺参数，在镍箔上生长的大规模单层石墨烯与在铜箔上生长的相当。这些石墨烯薄膜能够转移到其他衬底上，如SiO2/Si、柔性透明聚对苯二甲酸乙二酯（PET），并通过光学显微镜、拉曼显微镜和扫描电子显微镜进行了验证。还讨论了转移到PET衬底上的石墨烯薄膜的薄层电阻和透过率。