使用冷冻 CO2 抗蚀剂进行大面积、薄膜有机半导体的干法光刻。
Dry lithography of large-area, thin-film organic semiconductors using frozen CO(2) resists.
机构信息
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
出版信息
Adv Mater. 2012 Dec 4;24(46):6136-40. doi: 10.1002/adma.201202446. Epub 2012 Sep 11.
Abstract
To address the incompatibility of organic semiconductors with traditional photolithography, an inert, frozen CO(2) resist is demonstrated that forms an in situ shadow mask. Contact with a room-temperature micro-featured stamp is used to pattern the resist. After thin film deposition, the remaining CO(2) is sublimed to lift off unwanted material. Pixel densities of 325 pixels-per-inch are shown.
摘要
为了解决有机半导体与传统光刻技术不兼容的问题，本文展示了一种惰性的、冻结的 CO2 抗蚀剂，它可以形成原位阴影掩模。通过与室温微特征印章接触来对抗蚀剂进行图案化。在薄膜沉积之后，剩余的 CO2 被升华以去除不需要的材料。展示了 325 像素/英寸的像素密度。
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