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采用表面图案化和金纳米颗粒的砷化镓单结太阳能电池新型抗反射技术。

Novel anti-reflection technology for GaAs single-junction solar cells using surface patterning and Au nanoparticles.

作者信息

Kim Youngjo, Lam Nguyen Dinh, Kim Kangho, Kim Sangin, Rotermund Fabian, Lim Hanjo, Lee Jaejin

机构信息

Department of Electrical and Computer Engineering, Ajou University, Suwon, KS002, Korea.

出版信息

J Nanosci Nanotechnol. 2012 Jul;12(7):5479-83. doi: 10.1166/jnn.2012.6258.

Abstract

Single-junction GaAs solar cell structures were grown by low-pressure MOCVD on GaAs (100) substrates. Micro-rod arrays with diameters of 2 microm, 5 microm, and 10 microm were fabricated on the surfaces of the GaAs solar cells via photolithography and wet chemical etching. The patterned surfaces were coated with Au nanoparticles using an Au colloidal solution. Characteristics of the GaAs solar cells with and without the micro-rod arrays and Au nanoparticles were investigated. The short-circuit current density of the GaAs solar cell with 2 microm rod arrays and Au nanoparticles increased up to 34.9% compared to that of the reference cell without micro-rod arrays and Au nanoparticles. The conversion efficiency of the GaAs solar cell that was coated with Au nanoparticles on the patterned surface with micro-rod arrays can be improved from 14.1% to 19.9% under 1 sun AM 1.5G illumination. These results show that micro-rod arrays and Au nanoparticle coating can be applied together in surface patterning to achieve a novel cost-effective anti-reflection technology.

摘要

通过低压金属有机化学气相沉积法在砷化镓(100)衬底上生长单结砷化镓太阳能电池结构。通过光刻和湿化学蚀刻在砷化镓太阳能电池表面制备了直径为2微米、5微米和10微米的微棒阵列。使用金胶体溶液在图案化表面涂覆金纳米颗粒。研究了有无微棒阵列和金纳米颗粒的砷化镓太阳能电池的特性。与没有微棒阵列和金纳米颗粒的参考电池相比,具有2微米棒阵列和金纳米颗粒的砷化镓太阳能电池的短路电流密度提高了34.9%。在1个太阳AM 1.5G光照下,在具有微棒阵列的图案化表面上涂覆金纳米颗粒的砷化镓太阳能电池的转换效率可从14.1%提高到19.9%。这些结果表明,微棒阵列和金纳米颗粒涂层可以一起应用于表面图案化,以实现一种新型的具有成本效益的抗反射技术。

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