Moon Kyungwon, Lee Young-Boo, Ahn Kwang-Soon, Choi Chel-Jong
Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756, Republic of Korea.
J Nanosci Nanotechnol. 2012 Jul;12(7):5558-63. doi: 10.1166/jnn.2012.6402.
Stoichiometric CuInSe2 absorber layers were formed using co-electrodeposition coupled with selenization. We investigated the influence of the metal ion ratio, supporting electrolyte, and deposition voltages on the structural and chemical properties of Cu-In alloys. The increases in deposition voltage and metal ion concentration helped to form In-rich Cu-In alloy with dendrite structure composed of a long central trunk with secondary branches. In addition, on increasing the concentration of the supporting electrolyte, the ratio of In to Cu in the Cu-In alloy increased, and surface morphology improved. Finally, based on an optimized co-electrodeposition process, the selenization of Cu-In alloys using the evaporation of the Se element was employed to form high quality CuInSe2 absorber layers.
通过共电沉积结合硒化形成化学计量比的CuInSe₂吸收层。我们研究了金属离子比例、支持电解质和沉积电压对Cu-In合金结构和化学性质的影响。沉积电压和金属离子浓度的增加有助于形成富In的Cu-In合金，其具有由长中心主干和二级分支组成的树枝状结构。此外，随着支持电解质浓度的增加，Cu-In合金中In与Cu的比例增加，表面形貌得到改善。最后，基于优化的共电沉积工艺，采用Se元素蒸发对Cu-In合金进行硒化，以形成高质量的CuInSe₂吸收层。
