Kwon Yong Hun, Do Hyun Woo, Kim Hyoungsub, Cho Hyung Koun
J Nanosci Nanotechnol. 2015 Oct;15(10):7836-40. doi: 10.1166/jnn.2015.11201.
Cu/In bi-metal stacked structures were prepared on Mo coated soda lime glass substrates using electrodeposition method. These metallic precursors were selenized at 550 °C for 60 min to synthesize the CuInSe2 (CIS) thin films in a thermal evaporator chamber with an Se overpressure atmosphere. The composition ratios of CIS thin films were systematically controlled using the coulometric method of the electrodeposition, where the accumulated coulomb of In layers was varied from 1062 to 6375 mC/cm2. As a result, the stoichiometric CIS film was obtained in the Cu/In coulomb ratio of 0.6. Highly crystallized CIS films were produced from the liquid Cu-Se phase in the Cu/In coulomb ratio of ≥0.6. In contrast, the crystallinity and grain size were degraded in the In-rich region. We found that the Cu/In composition ratio of CIS films was linearly proportional to the precursor thickness determined by the coulomb ratio.
采用电沉积法在涂覆有钼的钠钙玻璃基板上制备了铜/铟双金属堆叠结构。将这些金属前驱体在550℃下硒化60分钟，在具有硒过压气氛的热蒸发室中合成铜铟硒2（CIS）薄膜。使用电沉积的库仑法系统地控制CIS薄膜的组成比，其中铟层的累积电量从1062变化到6375 mC/cm²。结果，在铜/铟库仑比为0.6时获得了化学计量比的CIS薄膜。在铜/铟库仑比≥0.6时，从液态铜-硒相中制备出了高度结晶的CIS薄膜。相比之下，在富铟区域，结晶度和晶粒尺寸下降。我们发现CIS薄膜的铜/铟组成比与由库仑比确定的前驱体厚度呈线性比例关系。
