Kim D H, You J H, Kim J H, Yoo K H, Kim T W
Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea.
J Nanosci Nanotechnol. 2012 Jul;12(7):5687-90. doi: 10.1166/jnn.2012.6391.
The electronic structures and carrier distributions of T-shaped AlxGa1_xAs/AlyGa1-yAs quantum wire (QWR) consisting of crossed arm and stem wells were numerically calculated by using a finite-difference method (FDM). The electronic subband energies in the arm and the stem wells were numerically calculated by using the FDM taking into account two-band Hamiltonian systems considering with and without strain and nonparabolicity effects. The band deformation due to strain and the probabilistic electron confinement of T-shaped AlxGa1-xAs/AlyGa1-yAs QWRs were also calculated. The transition energy from the ground heavy-hole state (HH1) to the ground electron state (E1) was 1.584 eV when the strain was not considered and 1.585 eV when the strain effects were included. The excitonic peak energies corresponding to the interband transitions (E1-HH1) in the T-shaped QWRs determined from the photoluminescence spectra were compared favorably with those determined from the FDM calculations.
采用有限差分法（FDM）对由交叉臂阱和主干阱组成的T形AlxGa1_xAs/AlyGa1-yAs量子线（QWR）的电子结构和载流子分布进行了数值计算。考虑有应变和无应变以及非抛物效应的双带哈密顿系统，采用FDM对臂阱和主干阱中的电子子带能量进行了数值计算。还计算了T形AlxGa1-xAs/AlyGa1-yAs QWRs由于应变引起的能带变形和概率电子限制。当不考虑应变时，从基态重空穴态（HH1）到基态电子态（E1）的跃迁能量为1.584 eV，当包括应变效应时为1.585 eV。由光致发光光谱确定的T形QWRs中对应于带间跃迁（E1-HH1）的激子峰能量与由FDM计算确定的能量吻合良好。
