未掺杂和调制掺杂的赝晶Al<sub>y</sub>Ga<sub>1-y</sub>As/In<sub>x</sub>Ga<sub>1-x</sub>As/Al<sub>y</sub>Ga<sub>1-y</sub>As单量子阱的光致发光研究 - Suppr | 超能文献

Photoluminescence study of undoped and modulation-doped pseudomorphic AlyGa1-yAs/InxGa1-xAS/AlyGa1-yAs single quantum wells.

作者信息

Kirby PB, Constable JA, Smith RS

出版信息

Phys Rev B Condens Matter. 1989 Aug 15;40(5):3013-3020. doi: 10.1103/physrevb.40.3013.

DOI:10.1103/physrevb.40.3013

Abstract

摘要

文献AI研究员

20分钟写一篇综述，助力文献阅读效率提升50倍。

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

文档翻译

学术文献翻译模型，支持多种主流文档格式。

相似文献

1

Photoluminescence study of undoped and modulation-doped pseudomorphic AlyGa1-yAs/InxGa1-xAS/AlyGa1-yAs single quantum wells.未掺杂和调制掺杂的赝晶Al<sub>y</sub>Ga<sub>1-y</sub>As/In<sub>x</sub>Ga<sub>1-x</sub>As/Al<sub>y</sub>Ga<sub>1-y</sub>As单量子阱的光致发光研究

Phys Rev B Condens Matter. 1989 Aug 15;40(5):3013-3020. doi: 10.1103/physrevb.40.3013.

2

Magneto-optical experiments on GaAs/InxGa1-xAs/AlyGa1-yAs modulation-doped single quantum wells.关于 GaAs/InxGa1-xAs/AlyGa1-yAs 调制掺杂单量子阱的磁光实验。

Phys Rev B Condens Matter. 1996 Oct 15;54(16):11360-11364. doi: 10.1103/physrevb.54.11360.

3

Localization effects, energy relaxation, and electron and hole dispersion in selectively doped n-type AlyGa1-yAs/InxGa1-xAs/GaAs quantum wells.选择性掺杂n型Al<sub>y</sub>Ga<sub>1-y</sub>As/In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs量子阱中的局域化效应、能量弛豫以及电子和空穴色散

Phys Rev B Condens Matter. 1990 Nov 15;42(15):9472-9479. doi: 10.1103/physrevb.42.9472.

4

Magneto-optical studies of strain effects on the excitons in InxGa1-xAs/AlyGa1-yAs strained quantum wells.InxGa1-xAs/AlyGa1-yAs应变量子阱中激子的应变效应的磁光研究。

Phys Rev B Condens Matter. 1993 Aug 15;48(8):5256-5260. doi: 10.1103/physrevb.48.5256.

5

Hole relaxation in p-type InxGa1-xAs/AlyGa1-yAs quantum wells observed by ultrafast midinfrared spectroscopy.通过超快中红外光谱观察p型InxGa1-xAs/AlyGa1-yAs量子阱中的空穴弛豫。

Phys Rev B Condens Matter. 1995 Apr 15;51(16):10631-10634. doi: 10.1103/physrevb.51.10631.

6

Influence of the spin-orbit split-off valence band in InxGa1-xAs/AlyGa1-yAs strained-layer quantum wells.InxGa1-xAs/AlyGa1-yAs应变层量子阱中自旋轨道分裂价带的影响

Phys Rev B Condens Matter. 1992 Feb 15;45(7):3906-3909. doi: 10.1103/physrevb.45.3906.

7

Electronic structures and carrier distributions of T-shaped AlxGa1-xAs/AlyGa1-yAs quantum wires fabricated by a cleaved-edge overgrowth method.通过解理边缘过生长法制备的T形AlxGa1-xAs/AlyGa1-yAs量子线的电子结构和载流子分布

J Nanosci Nanotechnol. 2012 Jul;12(7):5687-90. doi: 10.1166/jnn.2012.6391.

8

Carrier-gain dynamics in InxGa1-xAs/AlyGa1-yAs strained-layer single-quantum-well diode lasers: Comparison of theory and experiment.InxGa1-xAs/AlyGa1-yAs 应变层单量子阱二极管激光器中的载流子增益动力学：理论与实验的比较

Phys Rev B Condens Matter. 1994 Sep 15;50(12):8539-8558. doi: 10.1103/physrevb.50.8539.

9

Microscopic excitation spectroscopy for zero-dimensional quantized states of individual InxGa1-xAs/AlyGa1-yAs quantum dots.用于单个InxGa1-xAs/AlyGa1-yAs量子点零维量子态的微观激发光谱学。

Phys Rev B Condens Matter. 1996 Jun 15;53(23):15743-15748. doi: 10.1103/physrevb.53.15743.

10

Erratum: Band offsets for strained InxGa1-xAs/AlyGa1-yAs heterointerfaces.勘误：应变 InxGa1-xAs/AlyGa1-yAs 异质界面的能带偏移

Phys Rev B Condens Matter. 1990 Sep 15;42(8):5361. doi: 10.1103/physrevb.42.5361.2.