Yang Y-B, Jeon Y M, Kim J U, Cho J
School of Mechanical and Advanced Materials Engineering, UNIST, Ulsan, Korea.
Eur Phys J E Soft Matter. 2012 Sep;35(9):86. doi: 10.1140/epje/i2012-12086-9. Epub 2012 Sep 14.
Using self-consistent field theory (SCFT), morphology development in symmetric linear ABC triblock copolymer films on neutral and selective substrates has been studied, and it is compared with the triblock copolymer morphologies in bulk. In particular, the effects of the substrate preferable to B (interior) block on nanopattern formation of the copolymer films are of our central interest. Here, we report various nanopatterns with tunable square morphologies. The domain patterns are much more diverse than those parallel to the substrate with substrate selectivity for end-block or those vertical to the substrate without substrate selectivity. Furthermore, in order to figure out an economical and efficient way to fabricate useful passive pattern transfer layers, which have potential applications in microelectronic processes and ultrahigh density storage media, we propose a two-step strategy and scrutinize the conditions for generating square symmetries using cylinder-forming or lamella-forming AB diblock copolymers deposited on substrates created from ABC triblock copolymer films. It is found that a thinner film with weak incompatibility can produce square patterns.
利用自洽场理论（SCFT），研究了对称线性ABC三嵌段共聚物薄膜在中性和选择性基底上的形态发展，并将其与本体中的三嵌段共聚物形态进行了比较。特别地，我们主要关注优先吸附B（中间）嵌段的基底对共聚物薄膜纳米图案形成的影响。在此，我们报道了具有可调正方形形态的各种纳米图案。这些畴图案比那些对末端嵌段具有基底选择性且平行于基底的图案，以及那些对基底无选择性且垂直于基底的图案要丰富得多。此外，为了找到一种经济高效的方法来制造有用的被动图案转移层，这种层在微电子工艺和超高密度存储介质中有潜在应用，我们提出了一种两步策略，并详细研究了使用沉积在由ABC三嵌段共聚物薄膜制成的基底上的形成圆柱或片层的AB二嵌段共聚物生成正方形对称性的条件。结果发现，具有较弱不相容性的较薄膜可以产生正方形图案。
