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由剪切对齐嵌段共聚物薄膜制备大面积纳米方阵列。

Large-area nanosquare arrays from shear-aligned block copolymer thin films.

机构信息

Department of Chemical and Biological Engineering, Princeton University , Princeton, New Jersey 08544, United States.

出版信息

Nano Lett. 2014 Oct 8;14(10):5698-705. doi: 10.1021/nl502416b. Epub 2014 Sep 15.

Abstract

While block copolymer lithography has been broadly applied as a bottom-up patterning technique, only a few nanopattern symmetries, such as hexagonally packed dots or parallel stripes, can be produced by spontaneous self-assembly of simple diblock copolymers; even a simple square packing has heretofore required more intricate macromolecular architectures or nanoscale substrate prepatterning. In this study, we demonstrate that square, rectangular, and rhombic arrays can be created via shear-alignment of distinct layers of cylinder-forming block copolymers, coupled with cross-linking of the layers using ultraviolet light. Furthermore, these block copolymer arrays can in turn be used as templates to fabricate dense, substrate-supported arrays of nanostructures comprising a wide variety of elements: deep (>50 nm) nanowells, nanoposts, and thin metal nanodots (3 nm thick, 35 nm pitch) are all demonstrated.

摘要

虽然嵌段共聚物光刻已被广泛应用于自下而上的图案化技术,但通过简单的两亲性嵌段共聚物的自发自组装,只能产生少数纳米图案对称性,如六边形密堆积点或平行条纹;即使是简单的正方形堆积,迄今为止也需要更复杂的大分子结构或纳米级基底预图案化。在这项研究中,我们证明了通过不同层的圆柱形成嵌段共聚物的剪切排列,并结合使用紫外线对层进行交联,可以形成正方形、长方形和菱形阵列。此外,这些嵌段共聚物阵列可以反过来用作模板,制造由各种元素组成的密集、基底支撑的纳米结构阵列:深(>50nm)纳米井、纳米柱和薄金属纳米点(3nm 厚,35nm 间距)都得到了证明。

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