Los Alamos National Laboratory, Los Alamos, New Mexico 87544, USA.
Nat Commun. 2012;3:1067. doi: 10.1038/ncomms2075.
A current of electrons traversing a landscape of localized spins possessing non-coplanar magnetic order gains a geometrical (Berry) phase, which can lead to a Hall voltage independent of the spin-orbit coupling within the material-a geometrical Hall effect. Here we show that the highly correlated metal UCu(5) possesses an unusually large controllable geometrical Hall effect at T<1.2 K due to its frustration-induced magnetic order. The magnitude of the Hall response exceeds 20% of the ν=1 quantum Hall effect per atomic layer, which translates into an effective magnetic field of several hundred Tesla acting on the electrons. The existence of such a large geometric Hall response in UCu(5) opens a new field of enquiry into the importance of the role of frustration in highly correlated electron materials.
电子流穿过局部自旋具有非共面磁序的景观会获得几何（Berry）相位，这可能导致与材料内部的自旋轨道耦合无关的霍尔电压——即几何霍尔效应。在这里，我们表明，由于其受挫诱导的磁序，高度相关的金属 UCu(5) 在 T<1.2 K 时具有异常大的可控几何霍尔效应。霍尔响应的幅度超过每个原子层ν=1 量子霍尔效应的 20%，这相当于作用在电子上的数百特斯拉的有效磁场。UCu(5) 中存在如此大的几何霍尔响应，为探究受挫在高度相关电子材料中的重要性开辟了一个新的研究领域。
