Turku University Centre of Materials and Surfaces (MatSurf), Laboratory of Materials Chemistry and Chemical Analysis, University of Turku, Vatselankatu 2, 20014 Turku, Finland.
Phys Chem Chem Phys. 2012 Oct 28;14(40):14003-9. doi: 10.1039/c2cp42253k. Epub 2012 Sep 18.
The electrochemical properties of self-assembled films of graphene oxide (GO) on mercaptoethylamine (MEA) modified rough Au-surfaces were studied. The film deposition process on MEA primed gold was followed by surface plasmon resonance measurements and the film morphology on 3-aminopropyltriethoxysilane primed Si(100)-surface was studied by atomic force microscopy. The deposited few layer thick GO films on gold were electrochemically reduced by cyclic voltammetry simultaneously as the structural changes in the film were recorded by in situ vibrational spectroscopies. In situ surface enhanced infrared spectroscopy results indicate that the effect of the applied potential on the GO structure could be divided into two parts where the changes occurring at moderate negative potentials are mainly related to changes in the double layer at the film-electrolyte interface and to hydrogen bonding of intercalated water between the GO sheets. At potentials more negative than -0.8 V vs. Ag/AgCl the reduction of GO starts to take place with concomitant conversion of the different functional groups of the film.
研究了氧化石墨烯（GO）自组装膜在巯基乙胺（MEA）修饰粗糙金表面上的电化学性质。通过表面等离子体共振测量跟踪了MEA 引发金上的薄膜沉积过程，并通过原子力显微镜研究了 3-氨丙基三乙氧基硅烷引发的 Si（100）-表面上的薄膜形态。通过循环伏安法同时电化学还原沉积在金上的几层厚 GO 薄膜，同时通过原位振动光谱记录薄膜结构的变化。原位表面增强红外光谱结果表明，施加电位对 GO 结构的影响可以分为两部分，在适度负电位下发生的变化主要与薄膜-电解质界面双层的变化以及插层间水的氢键有关GO 片之间。在比-0.8 V vs. Ag/AgCl 更负的电位下，GO 的还原开始发生，同时薄膜的不同官能团也发生转化。
