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利用时间分辨和角度分辨光电子能谱测量拓扑绝缘体 Bi2Se3 表面的本征狄拉克费米子冷却。

Measurement of intrinsic dirac fermion cooling on the surface of the topological insulator Bi2Se3 using time-resolved and angle-resolved photoemission spectroscopy.

机构信息

Department of Physics, Massachusetts Institute of Technology, Cambridge, 02139, USA.

出版信息

Phys Rev Lett. 2012 Sep 21;109(12):127401. doi: 10.1103/PhysRevLett.109.127401. Epub 2012 Sep 20.

Abstract

We perform time- and angle-resolved photoemission spectroscopy of a prototypical topological insulator (TI) Bi(2)Se(3) to study the ultrafast dynamics of surface and bulk electrons after photoexcitation. By analyzing the evolution of surface states and bulk band spectra, we obtain their electronic temperature and chemical potential relaxation dynamics separately. These dynamics reveal strong phonon-assisted surface-bulk coupling at high lattice temperature and total suppression of inelastic scattering between the surface and the bulk at low lattice temperature. In this low temperature regime, the unique cooling of Dirac fermions in TI by acoustic phonons is manifested through a power law dependence of the surface temperature decay rate on carrier density.

摘要

我们对典型拓扑绝缘体(TI)Bi(2)Se(3)进行了时间和角度分辨光发射谱研究,以研究光激发后表面和体电子的超快动力学。通过分析表面态和体能带谱的演化,我们分别获得了它们的电子温度和化学势弛豫动力学。这些动力学揭示了在高晶格温度下强烈的声子辅助的表面-体耦合,以及在低晶格温度下表面和体之间的非弹性散射的完全抑制。在这个低温区域,通过声子对狄拉克费米子的独特冷却,表现为表面温度衰减率对载流子密度的幂律依赖关系。

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