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利用扫描隧道显微镜探究拓扑绝缘体Bi2Se3薄膜中的狄拉克费米子动力学

Probing Dirac fermion dynamics in topological insulator Bi2Se3 films with a scanning tunneling microscope.

作者信息

Song Can-Li, Wang Lili, He Ke, Ji Shuai-Hua, Chen Xi, Ma Xu-Cun, Xue Qi-Kun

机构信息

State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China.

Collaborative Innovation Center of Quantum Matter, Beijing 100084, China.

出版信息

Phys Rev Lett. 2015 May 1;114(17):176602. doi: 10.1103/PhysRevLett.114.176602. Epub 2015 Apr 28.

Abstract

Scanning tunneling microscopy and spectroscopy have been used to investigate the femtosecond dynamics of Dirac fermions in the topological insulator Bi2Se3 ultrathin films. At the two-dimensional limit, bulk electrons become quantized and the quantization can be controlled by the film thickness at a single quintuple layer level. By studying the spatial decay of standing waves (quasiparticle interference patterns) off steps, we measure directly the energy and film thickness dependence of the phase relaxation length lϕ and inelastic scattering lifetime τ of topological surface-state electrons. We find that τ exhibits a remarkable (E - EF)(-2) energy dependence and increases with film thickness. We show that the features revealed are typical for electron-electron scattering between surface and bulk states.

摘要

扫描隧道显微镜和光谱学已被用于研究拓扑绝缘体Bi2Se3超薄膜中狄拉克费米子的飞秒动力学。在二维极限下,体电子发生量子化,且这种量子化可在单个五重层水平上通过薄膜厚度进行控制。通过研究台阶处驻波(准粒子干涉图案)的空间衰减,我们直接测量了拓扑表面态电子的相位弛豫长度lϕ和非弹性散射寿命τ对能量和薄膜厚度的依赖性。我们发现τ呈现出显著的(E - EF)(-2)能量依赖性,并随薄膜厚度增加。我们表明所揭示的这些特征是表面态与体态之间电子-电子散射的典型特征。

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