Department of Physics and Astronomy, Optical Science and Technology Center, University of Iowa, Iowa City, 52242, USA.
Phys Rev Lett. 2012 Aug 17;109(7):076603. doi: 10.1103/PhysRevLett.109.076603. Epub 2012 Aug 16.
X rays produced during electron-beam deposition of metallic electrodes drastically change the performance of organic spintronic devices. The x rays generate traps with an activation energy of ≈0.5 eV in a commonly used organic. These traps lead to a dramatic decrease in spin-diffusion length in organic spin valves. In organic magnetoresistive (OMAR) devices, however, the traps strongly enhance magnetoresistance. OMAR is an intrinsic magnetotransport phenomenon and does not rely on spin injection. We discuss our observations in the framework of currently existing theories.
X 射线在电子束沉积金属电极过程中产生，极大地改变了有机自旋电子器件的性能。X 射线在一种常用的有机材料中产生了具有约 0.5eV 激活能的陷阱。这些陷阱导致有机自旋阀中自旋扩散长度急剧下降。然而，在有机磁阻（OMAR）器件中，这些陷阱强烈地增强了磁阻。OMAR 是一种固有磁输运现象，不依赖于自旋注入。我们在现有的理论框架内讨论了我们的观察结果。
