Sun Dali, Fang Mei, Xu Xiaoshan, Jiang Lu, Guo Hangwen, Wang Yanmei, Yang Wenting, Yin Lifeng, Snijders Paul C, Ward T Z, Gai Zheng, Zhang X-G, Lee Ho Nyung, Shen Jian
1] State Key Laboratory of Surface Physics and Department of Physics and Collaborative Innovation Center of Advanced Microstructure, Fudan University, Shanghai 200433, China [2] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA [3] Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA [4] [5].
1] State Key Laboratory of Surface Physics and Department of Physics and Collaborative Innovation Center of Advanced Microstructure, Fudan University, Shanghai 200433, China [2].
Nat Commun. 2014 Jul 10;5:4396. doi: 10.1038/ncomms5396.
Organic spintronic devices have been appealing because of the long spin lifetime of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer: the magnetoresistance of the spin valve depends strongly on the history of the bias voltage, which is correlated with the polarization of the ferroelectric layer; the magnetoresistance even changes sign when the electric polarization of the ferroelectric layer is reversed. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves.
有机自旋电子器件因其有机材料中电荷载流子的长自旋寿命以及低成本、柔韧性和化学多样性而备受关注。在先前的研究中，有机自旋阀电阻的控制通常是通过使两个铁磁电极的磁化方向对齐来实现的，从而产生磁阻。在此，我们采用一种新方法来调节有机自旋阀的电阻，即在铁磁电极和有机间隔层之间添加一层薄的铁电界面层：自旋阀的磁阻强烈依赖于偏置电压的历史，这与铁电层的极化相关；当铁电层的电极化反转时，磁阻甚至会改变符号。这些发现使得利用电场和磁场对电阻进行主动控制成为可能，为多态有机自旋阀开辟了道路。
