采用微下拉法控制 Sr3NbGa3Si2O14 和 Sr3TaGa3Si2O14 压电晶体的形状可控晶体生长。
Shape-controlled crystal growth of Sr3NbGa3Si2O14 and Sr3TaGa3Si2O14 piezoelectric crystals by the micro-pulling-down method.
机构信息
Institute for Material Research, Tohoku University, Sendai, Japan.
出版信息
IEEE Trans Ultrason Ferroelectr Freq Control. 2012 Sep;59(9):1864-7. doi: 10.1109/TUFFC.2012.2397.
We grew column-shaped Sr(3)NbGa(3)Si(2)O(14) (SNGS) and Sr(3)TaGa(3)Si(2)O(14) (STGS) langasite-type piezoelectric single crystals by the micro-pulling-down (μ-PD) method. 3-mm-diameter SNGS and STGS crystals were grown using a Pt-Rh crucible with a 3-mm-diameter columnar die. According to X-ray rocking curve measurements, the grown crystals had crystallinity equivalent to that of crystals grown by the Czochralski (Cz) method. The crystals were single-phase materials with langasite-type crystal structure. The lattice parameters of the grown crystals were almost consistent with those of crystals grown by the Cz method.
我们通过微下拉（μ-PD）法生长了 Sr(3)NbGa(3)Si(2)O(14)（SNGS）和 Sr(3)TaGa(3)Si(2)O(14)（STGS）两种钽镓硅氧（langasite）型压电单晶。使用直径为 3 毫米的柱状模具和 Pt-Rh 坩埚生长出直径为 3 毫米的 SNGS 和 STGS 晶体。根据 X 射线摇摆曲线测量，所生长的晶体具有与提拉法（Cz）生长晶体相当的结晶度。这些晶体均为单相材料，具有 langasite 型晶体结构。所生长晶体的晶格参数与 Cz 法生长晶体的晶格参数基本一致。
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