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不同铝浓度的Ca₃Nb(GaAl)₃Si₂O压电单晶的晶体生长

Crystal Growth of Ca₃Nb(GaAl)₃Si₂O Piezoelectric Single Crystals with Various Al Concentrations.

作者信息

Yokota Yuui, Kudo Tetsuo, Ohashi Yuji, Medvedev Andrey, Kurosawa Shunsuke, Kamada Kei, Yoshikawa Akira

机构信息

New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10, Aoba, Aramaki, Aoba-ku, Miyagi, Sendai 980-8579, Japan.

Institute for Materials Research, Tohoku University, 2-1-1, Katahira, Aoba-ku, Miyagi, Sendai 980-8577, Japan.

出版信息

Materials (Basel). 2015 Aug 26;8(9):5597-5605. doi: 10.3390/ma8095264.

DOI:10.3390/ma8095264
PMID:28793525
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5512616/
Abstract

Ca₃Nb(GaAl)₃Si₂O (CNGAS) single crystals with various Al concentrations were grown by a micro-pulling-down (µ-PD) method and their crystal structures, chemical compositions, crystallinities were investigated. CNGAS crystals with = 0.2, 0.4 and 0.6 indicated a single phase of langasite-type structure without any secondary phases. In contrast, the crystals with = 0.8 and 1 included some secondary phases in addition to the langasite-type phase. Lattice parameters, - and -axes lengths, of the langasite-type phase systematically decreased with an increase of Al concentration. The results of chemical composition analysis revealed that the actual Al concentrations in as-grown crystals were almost consistent with the nominal compositions. In addition, there was no large segregation of each cation along the growth direction.

摘要

采用微下拉(µ-PD)法生长了不同铝浓度的Ca₃Nb(GaAl)₃Si₂O(CNGAS)单晶,并对其晶体结构、化学成分和结晶度进行了研究。铝含量为0.2、0.4和0.6的CNGAS晶体呈现出单一的硅酸镧矿型结构相,没有任何次生相。相比之下,铝含量为0.8和1的晶体除了硅酸镧矿型相之外还包含一些次生相。硅酸镧矿型相的晶格参数、a轴和c轴长度随着铝浓度的增加而系统地减小。化学成分分析结果表明,生长态晶体中的实际铝浓度与标称成分几乎一致。此外,各阳离子沿生长方向没有大的偏析。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/105f/5512616/6b1077921eb5/materials-08-05264-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/105f/5512616/239450749294/materials-08-05264-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/105f/5512616/307b3b16ba45/materials-08-05264-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/105f/5512616/95a05af23abf/materials-08-05264-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/105f/5512616/7e6e4fb3ac13/materials-08-05264-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/105f/5512616/6b1077921eb5/materials-08-05264-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/105f/5512616/239450749294/materials-08-05264-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/105f/5512616/307b3b16ba45/materials-08-05264-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/105f/5512616/95a05af23abf/materials-08-05264-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/105f/5512616/7e6e4fb3ac13/materials-08-05264-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/105f/5512616/6b1077921eb5/materials-08-05264-g005.jpg

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本文引用的文献

1
Shape-controlled crystal growth of Sr3NbGa3Si2O14 and Sr3TaGa3Si2O14 piezoelectric crystals by the micro-pulling-down method.采用微下拉法控制 Sr3NbGa3Si2O14 和 Sr3TaGa3Si2O14 压电晶体的形状可控晶体生长。
IEEE Trans Ultrason Ferroelectr Freq Control. 2012 Sep;59(9):1864-7. doi: 10.1109/TUFFC.2012.2397.