Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, Dresden, 01314, Germany.
Nanoscale Res Lett. 2012 Sep 25;7(1):528. doi: 10.1186/1556-276X-7-528.
The integration of ferromagnetic Mn5Ge3 with the Ge matrix is promising for spin injection in a silicon-compatible geometry. In this paper, we report the preparation of magnetic Mn5Ge3 nanocrystals embedded inside the Ge matrix by Mn ion implantation at elevated temperature. By X-ray diffraction and transmission electron microscopy, we observe crystalline Mn5Ge3 with variable size depending on the Mn ion fluence. The electronic structure of Mn in Mn5Ge3 nanocrystals is a 3d6 configuration, which is the same as that in bulk Mn5Ge3. A large positive magnetoresistance has been observed at low temperatures. It can be explained by the conductivity inhomogeneity in the magnetic/semiconductor hybrid system.
铁磁 Mn5Ge3 与 Ge 基体的集成有望在硅兼容的几何形状中实现自旋注入。在本文中，我们报道了通过高温下 Mn 离子注入在 Ge 基体中嵌入磁性 Mn5Ge3 纳米晶的制备方法。通过 X 射线衍射和透射电子显微镜，我们观察到了不同 Mn 离子注入剂量下具有不同尺寸的结晶 Mn5Ge3。Mn5Ge3 纳米晶中 Mn 的电子结构为 3d6 构型，与体相 Mn5Ge3 相同。在低温下观察到了大的正磁电阻，这可以用磁性/半导体混合系统中的电导率不均匀性来解释。
