Wang Yong, Xiu Faxian, Wang Ya, Zou Jin, Beyermann Ward P, Zhou Yi, Wang Kang L
Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia Campus, Brisbane QLD 4072, Australia.
Nanoscale Res Lett. 2011 Feb 11;6(1):134. doi: 10.1186/1556-276X-6-134.
In searching appropriate candidates of magnetic semiconductors compatible with mainstream Si technology for future spintronic devices, extensive attention has been focused on Mn-doped Ge magnetic semiconductors. Up to now, lack of reliable methods to obtain high-quality MnGe nanostructures with a desired shape and a good controllability has been a barrier to make these materials practically applicable for spintronic devices. Here, we report, for the first time, an innovative growth approach to produce self-assembled and coherent magnetic MnGe nanodot arrays with an excellent reproducibility. Magnetotransport experiments reveal that the nanodot arrays possess giant magneto-resistance associated with geometrical effects. The discovery of the MnGe nanodot arrays paves the way towards next-generation high-density magnetic memories and spintronic devices with low-power dissipation.
在寻找与主流硅技术兼容的、适用于未来自旋电子器件的磁性半导体合适候选材料时，人们将大量注意力集中在了锰掺杂锗磁性半导体上。到目前为止，缺乏可靠方法来获得具有所需形状且可控性良好的高质量锰锗纳米结构，这一直是使这些材料实际应用于自旋电子器件的障碍。在此，我们首次报道了一种创新的生长方法，可制备出自组装且相干的磁性锰锗纳米点阵列，具有出色的可重复性。磁输运实验表明，这些纳米点阵列具有与几何效应相关的巨磁电阻。锰锗纳米点阵列的发现为下一代高密度磁存储器和低功耗自旋电子器件铺平了道路。
