尺寸依赖的 N、Li、In、Ga、F 和 Ag 掺杂 ZnO 薄膜中的电子-声子耦合。
Size dependent electron-phonon coupling in N, Li, In, Ga, F and Ag doped ZnO thin films.
机构信息
Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, India.
出版信息
Spectrochim Acta A Mol Biomol Spectrosc. 2012 Dec;98:453-6. doi: 10.1016/j.saa.2012.08.076. Epub 2012 Sep 1.
PMID:23010630
Abstract
Polarized micro-Raman measurements are performed to study the phonon modes of N, Li, In, Ga, F and Ag doped ZnO thin films, grown by spray pyrolysis on corning glass substrates. The E(2)(high) mode displays a visible asymmetric line shape. The size and dopant dependence onto coupling strength between electron and LO phonon is experimentally estimated.
摘要
通过偏振微拉曼测量研究了 N、Li、In、Ga、F 和 Ag 掺杂 ZnO 薄膜的声子模式，这些薄膜是通过喷涂热解在康宁玻璃衬底上生长的。E(2)(high)模式显示出明显的不对称线形状。实验估计了电子和 LO 声子之间耦合强度的大小和掺杂依赖性。
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