采用脉冲激光沉积法制备的铟镓锌氧化物半导体薄膜。

InGaZnO semiconductor thin film fabricated using pulsed laser deposition.

作者信息

Chen Jiangbo, Wang Li, Su Xueqiong, Kong Le, Liu Guoqing, Zhang Xinping

机构信息

College of Applied Sciences, Beijing University of technology, Beijing, China.

出版信息

Opt Express. 2010 Jan 18;18(2):1398-405. doi: 10.1364/OE.18.001398.

DOI:10.1364/OE.18.001398

PMID:20173967

Abstract

The InGaZnO thin films are fabricated on the quartz glass using pulsed laser deposition (PLD), where the target is prepared by mixing the Ga(2)O(3), In(2)O(3), and ZnO powders at a mol ratio of 1:1:8 before the solid-state reactions in a tube furnace at the atmospheric pressure. The product thin films were characterized comprehensively by X-ray diffraction, atomic force microscopy, Hall-effect investigation, and X-ray photoelectron spectroscopy. Thus, we demonstrate semiconductor thin-film materials with high smoothness, high transmittance in visible region, and excellent electrical properties.

摘要

采用脉冲激光沉积（PLD）法在石英玻璃上制备铟镓锌氧化物（InGaZnO）薄膜，其中靶材是通过将Ga₂O₃、In₂O₃和ZnO粉末按1:1:8的摩尔比混合，然后在常压下于管式炉中进行固态反应制备而成。通过X射线衍射、原子力显微镜、霍尔效应研究和X射线光电子能谱对所得薄膜进行了全面表征。因此，我们展示了具有高平整度、在可见光区域具有高透射率以及优异电学性能的半导体薄膜材料。